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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current. : VCE(sat) 250mV at IC=200mA/IB=10mA. A1 KTC802E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Low VCE(sat) . A C 1 6 Complementary to KTA702E. 3 4 C 2 5 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Note : Single pulse Pw=1mS. * Total Rating. SYMBOL VCBO VCEO VEBO IC ICP (Note) PC * Tj Tstg RATING 15 12 6 500 1 200 150 -55 150 UNIT V V V mA A mW 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR H MAXIMUM RATINGS (Ta=25 ) TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 J D Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob ) TEST CONDITION VCB=15V, IE=0 IC=10 A IC=1mA IE=10 A VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, fT=100MHz VCB=10V, IE=0, f=1MHz 1 2 3 SYMBOL MIN. 15 12 6 270 - TYP. 90 320 7.5 MAX. 100 680 250 - UNIT nA V V V mV MHz pF Marking 6 5 4 Type Name LZ 1 2 3 2002. 2. 20 Revision No : 1 1/3 KTC802E h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-40 C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 1 3 10 C 125 Ta= CC 25 0 Ta= Ta=-4 I C /IB =20 100 50 30 VCE =2V 10 1 3 10 30 100 300 1K 30 100 300 1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 1 I C /IB =50 I C /I B =20 10 I C/I B = VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 10K 5K 3K I C /IB =20 Ta=25 C 1K 500 300 Ta=-40 C Ta=25 C 5 C Ta=12 100 3 10 30 100 300 1K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) 500 300 100 Ta=1 25 C Ta=2 VCE =2V fT - IC TRANSITION FREQUENCY f T (MHz) 1K 500 300 VCE =2V Ta=25 C 1K Ta=4 50 30 10 5 3 1 0 5C 0C 100 50 30 10 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) 0.5 1.0 1.5 BASE-EMITTER VOLTAGE VBE (V) 2002. 2. 20 Revision No : 1 2/3 KTC802E COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) 1K 500 300 100 50 30 10 5 3 1 COLLECTOR POWER DISSIPATION P C (mW) C ob - VCB , C ib - VEB I E =0A f=1MHz Ta=25 C Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) C ib C ob 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 2002. 2. 20 Revision No : 1 3/3 |
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